ZXMC6A09DN8TA

Diodes Incorporated

ZXMC6A09DN8TA

Datasheet

模拟与电源

MOSFET N/P-CH 60V 3.9A/3.7A 8SO

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs45mOhm @ 8.2A, 10V
基础料号ZXMC6A09
配置N and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs24.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1407pF @ 40V, 1580pF @ 40V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA (Min)

电气

漏源电压60V
Current - Continuous Drain (Id) @ 25°C3.9A, 3.7A
Power - Max1.8W

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SO

环境

工作温度-55°C ~ 150°C (TJ)