ZXM62N03E6TA

Diodes Incorporated

ZXM62N03E6TA

模拟与电源

MOSFET N-CH 30V 3.2A SOT-23-6

停产/老旧SOT-23-6模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs110mOhm @ 2.2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 25 V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

电气

漏源电压30 V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)

机械

Package / CaseSOT-23-6
供应商器件封装SOT-23-6