通用
| 基础料号 | HBDM60V600 |
|---|---|
| 制造商 | Diodes Incorporated |
| 安装类型 | Surface Mount |
| Product Status | Obsolete |
| Transistor Type | NPN, PNP |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 65V, 60V |
|---|---|
| Current - Collector (Ic) (Max) | 500mA, 600mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 1V / 100 @ 150mA, 10V |
| Power - Max | 200mW |
| Frequency - Transition | 100MHz |
机械
| 封装 | Tape & Reel (TR) Cut Tape (CT) |
|---|---|
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| 供应商器件封装 | SOT-363 |
环境
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|