DXTN5860DFDB-7

Diodes Incorporated

DXTN5860DFDB-7

Datasheet

模拟与电源

SS LOW SAT TRANSISTOR U-DFN2020

在产3-UDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic315mV @ 300mA, 6A

电气

Voltage - Collector Emitter Breakdown (Max)60 V
Current - Collector (Ic) (Max)6 A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce280 @ 500mA, 2V
Power - Max690 mW
Frequency - Transition115MHz

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case3-UDFN Exposed Pad
供应商器件封装U-DFN2020-3 (Type B)

环境

工作温度-55°C ~ 150°C (TJ)