DMTH4M70SPGW-13

Name: DMTH4M70SPGW-13
Brand: Diodes Incorporated

模拟与电源

MOSFET BVDSS: 31V~40V POWERDI808

在产SOT-1235模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	0.7mOhm @ 25A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	117.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	10053 pF @ 20 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	460A (Tc)
最大功耗	5.6W (Ta), 428W (Tc)

工作温度	-55°C~175°C(TJ)