DMTH47M2LFVW-7

Name: DMTH47M2LFVW-7
Brand: Diodes Incorporated

模拟与电源

MOSFET BVDSS: 31V~40V PowerDI333

在产8-PowerVDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	8.9mOhm @ 20A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	881 pF @ 20 V
制造商	Diodes Incorporated
安装类型	Surface Mount, Wettable Flank
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.3V @ 250µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	13.6A (Ta), 49A (Tc)
最大功耗	2.9W (Ta), 37.5W (Tc)

工作温度	-55°C ~ 175°C (TJ)