DMTH4014LPD-13

Diodes Incorporated

DMTH4014LPD-13

Datasheet

模拟与电源

MOSFET 2N-CH 40V 10.6A POWERDI50

在产8-PowerTDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs15mOhm @ 20A, 10V
配置2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs10.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds733pF @ 20V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压40V
Current - Continuous Drain (Id) @ 25°C10.6A (Ta), 43.6A (Tc)
Power - Max2.41W (Ta), 42.8W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerTDFN
供应商器件封装PowerDI5060-8

环境

GradeAutomotive
工作温度-55°C ~ 175°C (TJ)
QualificationAEC-Q101