DMT8008LFG-7

Name: DMT8008LFG-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 80V 16A PWRDI3333

在产8-PowerVDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	6.9mOhm @ 20A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	37.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2254 pF @ 40 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA

漏源电压	80 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	16A (Ta), 48A (Tc)
最大功耗	1W (Ta), 23.5W (Tc)

工作温度	-55°C~150°C(TJ)