DMT69M5LH3

Name: DMT69M5LH3
Brand: Diodes Incorporated

模拟与电源

MOSFET BVDSS: 41V~60V TO251 TUBE

在产TO-251-3 Stub Leads, IPak模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	10.5mOhm @ 20A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1406 pF @ 30 V
制造商	Diodes Incorporated
安装类型	Through Hole
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
最大功耗	3.3W (Ta), 96W (Tc)

工作温度	-55°C~150°C(TJ)