DMT64M1LCG-7

Name: DMT64M1LCG-7
Brand: Diodes Incorporated

模拟与电源

MOSFET BVDSS: 61V~100V V-DFN3333

在产8-PowerVDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	5.4mOhm @ 20A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	51.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2626 pF @ 30 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	65 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	16.7A (Ta), 67.8A (Tc)
最大功耗	1.2W (Ta)

工作温度	-55°C~150°C(TJ)