DMT6030LFCL-7

Name: DMT6030LFCL-7
Brand: Diodes Incorporated

模拟与电源

MOSFET BVDSS: 41V~60V X1-DFN1616

在产6-PowerUFDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	25mOhm @ 6.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	639 pF @ 30 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	6.5A (Ta)
最大功耗	780mW (Ta)

工作温度	-55°C~150°C(TJ)