DMT6011LPDW-13

Name: DMT6011LPDW-13
Brand: Diodes Incorporated

模拟与电源

MOSFET 2N-CH 60V 10.3A POWERDI50

在产8-PowerTDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	14mOhm @ 10A, 10V
基础料号	DMT6011
配置	2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs	22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1072pF @ 30V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	60V
Current - Continuous Drain (Id) @ 25°C	10.3A (Ta), 40A (Tc)
Power - Max	2.5W (Ta), 37.9W (Tc)

工作温度	-55°C ~ 150°C (TJ)