DMT6009LPS-13

Name: DMT6009LPS-13
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CHA 60V 10.6A POWERDI

在产8-PowerTDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	10mOhm @ 20A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1925 pF @ 30 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±16V
Vgs(th) (Max) @ Id	2V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	10.6A (Ta), 87A (Tc)
最大功耗	2.3W (Ta)

封装	Tape & Reel (TR) Cut Tape (CT)