DMT6004LPS-13

Name: DMT6004LPS-13
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 60V 22A PWRDI5060

在产8-PowerTDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	2.8mOhm @ 25A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4515 pF @ 30 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 90A (Tc)
最大功耗	2.1W (Ta), 105W (Tc)

工作温度	-55°C ~ 150°C (TJ)