DMT35M8LDG-13

Name: DMT35M8LDG-13
Brand: Diodes Incorporated

模拟与电源

MOSFET 2N-CH 30V 17A PWRDI3333

在产8-PowerVDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
配置	2 N-Channel (Dual) Asymmetrical
FET Feature	Standard
Gate Charge (Qg) (Max) @ Vgs	22.7nC @ 10V, 16.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1510pF @ 15V, 1032pF @ 15V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.9V @ 250µA

漏源电压	30V
Current - Continuous Drain (Id) @ 25°C	17A (Ta), 15.3A (Ta)
Power - Max	980mW (Ta), 2W (Tc)

工作温度	-55°C ~ 150°C (TJ)