DMT3020LFDF-7

Name: DMT3020LFDF-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 30V 8.4A 6UDFN

在产6-UDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	17mOhm @ 9A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	393 pF @ 15 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	8.4A (Ta)
最大功耗	700mW (Ta), 1.8W (Tc)

工作温度	-55°C ~ 150°C (TJ)