DMT3020LFDB-7

Diodes Incorporated

DMT3020LFDB-7

Datasheet

模拟与电源

MOSFET 2N-CH 30V 7.7A 6UDFN

在产6-UDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs20mOhm @ 9A, 10V
配置2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds393pF @ 15V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C7.7A
Power - Max700mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-UDFN Exposed Pad
供应商器件封装U-DFN2020-6 (Type B)

环境

GradeAutomotive
工作温度-55°C ~ 150°C (TJ)
QualificationAEC-Q101