DMT3011LDT-7

Name: DMT3011LDT-7
Brand: Diodes Incorporated

模拟与电源

MOSFET 2N-CH 30V 8A/10.7A 8VDFN

在产8-VDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	20mOhm @ 6A, 10V
基础料号	DMT3011
配置	2 N-Channel (Dual) Asymmetrical
Gate Charge (Qg) (Max) @ Vgs	13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	641pF @ 15V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3V @ 250µA

漏源电压	30V
Current - Continuous Drain (Id) @ 25°C	8A, 10.7A
Power - Max	1.9W

工作温度	-55°C ~ 155°C (TJ)