DMT3009UFVW-7

Name: DMT3009UFVW-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 30V 10.6A/30A PWRDI

在产8-PowerVDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	11mOhm @ 11A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	894 pF @ 15 V
制造商	Diodes Incorporated
安装类型	Surface Mount, Wettable Flank
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1.8V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	10.6A (Ta), 30A
最大功耗	1.2W (Ta), 2.6W (Tc)

工作温度	-55°C~150°C(TJ)