DMT3009LDT-7

Diodes Incorporated

DMT3009LDT-7

Datasheet

模拟与电源

MOSFET 2N-CH 30V 30A 8VDFN

在产8-VDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs11.1mOhm @ 14.4A, 10V
基础料号DMT3009
配置2 N-Channel (Dual) Asymmetrical
Gate Charge (Qg) (Max) @ Vgs20nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 15V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C30A
Power - Max1.2W

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-VDFN Exposed Pad
供应商器件封装V-DFN3030-8 (Type K)

环境

工作温度-55°C ~ 150°C (TJ)