DMT3006LDK-7

Name: DMT3006LDK-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 30V 17.1A/46.2A 8DFN

在产8-PowerVDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	6.5mOhm @ 12A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1320 pF @ 15 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	17.1A (Ta), 46.2A (Tc)
最大功耗	1.1W (Ta)

工作温度	-55°C ~ 150°C (TJ)