DMT3002LPS-13

Diodes Incorporated

DMT3002LPS-13

Datasheet

模拟与电源

MOSFET N-CH 30V 100A PWRDI5060-8

在产8-PowerTDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.6mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5000 pF @ 15 V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±16V
Vgs(th) (Max) @ Id2V @ 1mA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
最大功耗1.2W (Ta), 136W (Tc)

机械

封装Tape & Reel (TR)

环境

GradeAutomotive
工作温度-55°C ~ 150°C (TJ)
QualificationAEC-Q101