DMT2004UFDF-7

Name: DMT2004UFDF-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 24V 14.1A 6UDFN

在产6-UDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	6mOhm @ 9A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1683 pF @ 15 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1.45V @ 250µA

漏源电压	24 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Current - Continuous Drain (Id) @ 25°C	14.1A (Ta)
最大功耗	800mW (Ta), 12.5W (Tc)

封装	Tape & Reel (TR) Cut Tape (CT)