DMT12H065LFDF-7

Name: DMT12H065LFDF-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 115V 4.3A 6UDFN

在产6-UDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	65mOhm @ 3A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	252 pF @ 50 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	2.2V @ 250µA

漏源电压	115 V
Drive Voltage (Max Rds On, Min Rds On)	3V, 10V
Current - Continuous Drain (Id) @ 25°C	4.3A (Ta)
最大功耗	1W (Ta)

工作温度	-55°C~150°C(TJ)