DMT12H007SPS-13

Name: DMT12H007SPS-13
Brand: Diodes Incorporated

模拟与电源

MOSFET BVDSS: 101V~250V POWERDI5

在产8-PowerTDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	8.9mOhm @ 30A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3142 pF @ 60 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	120 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
最大功耗	2.9W

工作温度	-55°C~150°C(TJ)