DMT10H4M5LPS-13

Name: DMT10H4M5LPS-13
Brand: Diodes Incorporated

模拟与电源

MOSFET BVDSS: 61V-100V POWERDI50

在产8-PowerTDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4.3mOhm @ 30A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4843 pF @ 50 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	19A (Ta), 100A (Tc)
最大功耗	2.3W (Ta)

工作温度	-55°C ~ 150°C (TJ)