DMT10H025SK3-13

Name: DMT10H025SK3-13
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 100V 41.2A TO252 T&R

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	23mOhm @ 20A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1544 pF @ 50 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
系列	Automotive, AEC-Q101
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	41.2A (Tc)
最大功耗	1.4W (Ta)

工作温度	-55°C~150°C(TJ)