DMT10H010LSS-13

Name: DMT10H010LSS-13
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 100V 11.5A/29.5A 8SO

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	9.5mOhm @ 13A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 50 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.8V @ 250µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta), 29.5A (Tc)
最大功耗	1.4W (Ta)

工作温度	-55°C ~ 150°C (TJ)