DMPH4013SK3-13

Diodes Incorporated

DMPH4013SK3-13

Datasheet

模拟与电源

MOSFET P-CH 40V 55A TO252 T&R

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs15mOhm @ 10A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4004 pF @ 20 V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C55A (Tc)
最大功耗2.1W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)

环境

GradeAutomotive
工作温度-55°C ~ 175°C (TJ)
QualificationAEC-Q101