DMP68D0LFB-7B

Diodes Incorporated

DMP68D0LFB-7B

Datasheet

模拟与电源

MOSFET BVDSS: 61V~100V X2-DFN100

在产3-UFDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs8Ohm @ 100mA, 5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs4.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds36 pF @ 30 V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.1V @ 250µA

电气

漏源电压65 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 5V
Current - Continuous Drain (Id) @ 25°C192mA (Ta)
最大功耗500mW

机械

封装Tape & Reel (TR)
Package / Case3-UFDFN
供应商器件封装X1-DFN1006-3

环境

工作温度-55°C~150°C(TJ)