DMP45H150DHE-13

Diodes Incorporated

DMP45H150DHE-13

Datasheet

模拟与电源

MOSFET P-CH 450V 250MA SOT223

在产TO-261-4, TO-261AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs150Ohm @ 50mA, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds59.2 pF @ 25 V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压450 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C250mA (Tc)
最大功耗13.9W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
供应商器件封装SOT-223-3

环境

工作温度-55°C ~ 150°C (TJ)