DMP3065LVT-7

Diodes Incorporated

DMP3065LVT-7

模拟与电源

MOSFET P-CH 30V 4.9A TSOT-26

停产/老旧SOT-23-6 Thin, TSOT-23-6模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs42mOhm @ 4.9A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds587 pF @ 15 V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.1V @ 250µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C4.9A (Ta)
最大功耗1.2W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-23-6 Thin, TSOT-23-6
供应商器件封装TSOT-26

环境

工作温度-55°C ~ 150°C (TJ)