DMP2100UFU-7

Diodes Incorporated

DMP2100UFU-7

Datasheet

模拟与电源

MOSFET 2P-CH 20V 5.7A 6UDFN

在产6-UFDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs38mOhm @ 3.5A, 10V
基础料号DMP2100
配置2 P-Channel (Dual) Common Drain
Gate Charge (Qg) (Max) @ Vgs21.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds906pF @ 10V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.4V @ 250µA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C5.7A
Power - Max900mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-UFDFN Exposed Pad
供应商器件封装U-DFN2030-6 (Type B)

环境

工作温度-55°C ~ 150°C (TJ)