DMP2100UCB9-7

Diodes Incorporated

DMP2100UCB9-7

模拟与电源

MOSFET 2P-CH 20V 3A 9UWLB

停产/老旧9-UFBGA, WLBGA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs100mOhm @ 1A, 4.5V
基础料号DMP2100
配置2 P-Channel (Dual) Common Source
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds310pF @ 10V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id900mV @ 250µA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C3A
Power - Max800mW

机械

封装Tape & Reel (TR)
Package / Case9-UFBGA, WLBGA
供应商器件封装U-WLB1515-9

环境

工作温度-55°C ~ 150°C (TJ)