DMP2035UTS-13

Diodes Incorporated

DMP2035UTS-13

Datasheet

模拟与电源

MOSFET 2P-CH 20V 6.04A 8TSSOP

在产8-TSSOP (0.173", 4.40mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs35mOhm @ 4A, 4.5V
基础料号DMP2035
配置2 P-Channel (Dual) Common Drain
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs15.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1610pF @ 10V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C6.04A
Power - Max890mW

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-TSSOP (0.173", 4.40mm Width)
供应商器件封装8-TSSOP

环境

工作温度-55°C ~ 150°C (TJ)