DMP1081UCB4-7

Diodes Incorporated

DMP1081UCB4-7

模拟与电源

MOSFET P-CH 12V 3A U-WLB1010-4

停产/老旧4-UFBGA, WLBGA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs10Ohm @ 100mA, 0.9V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 6 V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)-6V
Vgs(th) (Max) @ Id650mV @ 250µA

电气

漏源电压12 V
Drive Voltage (Max Rds On, Min Rds On)0.9V, 4.5V
Current - Continuous Drain (Id) @ 25°C3A (Ta), 3.3A (Ta)
最大功耗820mW (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case4-UFBGA, WLBGA
供应商器件封装U-WLB1010-4

环境

工作温度-55°C ~ 150°C (TJ)