通用
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 12A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 913 pF @ 6 V |
| 制造商 | Diodes Incorporated |
| 安装类型 | Surface Mount, Wettable Flank |
| Product Status | Active |
| 系列 | Automotive, AEC-Q101 |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | -6V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |