DMP1007UCB9-7

Name: DMP1007UCB9-7
Brand: Diodes Incorporated

模拟与电源

MOSFET P-CH 8V 13.2A U-WLB1515-9

在产9-UFBGA, WLBGA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	5.7mOhm @ 2A, 4.5V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 4 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±6V
Vgs(th) (Max) @ Id	1.1V @ 250µA

漏源电压	8 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	13.2A (Ta)
最大功耗	840mW (Ta)

工作温度	-55°C ~ 150°C (TJ)