DMN65D9L-7

Name: DMN65D9L-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 60V 335MA SOT23

在产TO-236-3, SC-59, SOT-23-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4Ohm @ 500mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	41 pF @ 25 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±16V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	335mA (Ta)
最大功耗	270mW (Ta)

工作温度	-55°C~150°C(TJ)