DMN62D0SFD-7

Name: DMN62D0SFD-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 60V 540MA 3DFN

在产3-UDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	2Ohm @ 500mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	30.2 pF @ 25 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Current - Continuous Drain (Id) @ 25°C	540mA (Ta)
最大功耗	430mW (Ta)

工作温度	-55°C ~ 150°C (TJ)