DMN6040SFDE-7

Diodes Incorporated

DMN6040SFDE-7

Datasheet

模拟与电源

MOSFET N-CH 60V 5.3A 6UDFN

在产6-PowerUDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs38mOhm @ 4.3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1287 pF @ 25 V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C5.3A (Ta)
最大功耗660mW (Ta)

机械

封装Tape & Reel (TR)
Package / Case6-PowerUDFN
供应商器件封装U-DFN2020-6 (Type E)

环境

工作温度-55°C~150°C(TJ)