DMN6010SCTB-13

Name: DMN6010SCTB-13
Brand: Diodes Incorporated

模拟与电源

MOSFET BVDSS: 41V~60V TO263 T&R

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	10mOhm @ 25A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2692 pF @ 25 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 1mA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	128A (Tc)
最大功耗	5W (Ta), 312W (Tc)

工作温度	-55°C~150°C(TJ)