DMN32D0LFB4-7B

Name: DMN32D0LFB4-7B
Brand: Diodes Incorporated

模拟与电源

MOSFET BVDSS: 25V-30V X2-DFN1006

在产3-XFDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.2Ohm @ 100mA, 4V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	44.8 pF @ 15 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±10V
Vgs(th) (Max) @ Id	1.2V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	440mA (Ta)
最大功耗	350mW (Ta)

工作温度	-55°C ~ 150°C (TJ)