DMN30H4D0LFDE-13

Name: DMN30H4D0LFDE-13
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 300V 550MA 6UDFN

在产6-PowerUDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	4Ohm @ 300mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	187.3 pF @ 25 V
制造商	Diodes Incorporated
安装类型	Surface Mount
包装	Tape & Reel (TR) Cut Tape (CT)
产品状态	在产
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.8V @ 250µA

漏源电压	300 V
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 10V
Current - Continuous Drain (Id) @ 25°C	550mA (Ta)
最大功耗	630mW (Ta)

Package / Case	6-PowerUDFN
供应商器件封装	U-DFN2020-6 (Type E)

工作温度	-55°C ~ 150°C (TJ)