DMN3060LCA3-7

Name: DMN3060LCA3-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 30V 3.9A X4DSN1006-3

在产3-XFDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	60mOhm @ 500mA, 8V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.677 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	192 pF @ 15 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1.1V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 8V
Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)
最大功耗	790mW

工作温度	-55°C ~ 150°C (TJ)