DMN3032LFDBWQ-13

Name: DMN3032LFDBWQ-13
Brand: Diodes Incorporated

模拟与电源

MOSFET 2N-CH 30V 5.5A 6UDFN

在产6-UDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	30mOhm @ 5.8A, 10V
配置	2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs	10.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 15V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2V @ 250µA

漏源电压	30V
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)
Power - Max	820mW