DMN3027LFG-7

Name: DMN3027LFG-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 30V 5.3A PWRDI3333-8

在产8-PowerVDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	18.6mOhm @ 10A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	580 pF @ 15 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	1.8V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	5.3A (Ta)
最大功耗	1W (Ta)

工作温度	-55°C ~ 150°C (TJ)