DMN3020UFDFQ-7

Name: DMN3020UFDFQ-7
Brand: Diodes Incorporated

模拟与电源

MOSFET BVDSS: 25V~30V U-DFN2020

在产6-UDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	19mOhm @ 4.5A, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds	1304 pF @ 15 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	10.4A (Ta), 15A (Tc)
最大功耗	730mW (Ta)

封装	Bulk