DMN2991UDR4-7

Diodes Incorporated

DMN2991UDR4-7

Datasheet

模拟与电源

MOSFET 2N-CH 20V 0.5A 6DFN

在产6-XFDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs990mOhm @ 100mA, 4.5V
基础料号DMN2991
配置2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs0.28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds14.6pF @ 16V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

电气

漏源电压20V
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Power - Max380mW (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-XFDFN Exposed Pad
供应商器件封装X2-DFN1010-6 (Type UXC)

环境

工作温度-55°C ~ 150°C (TJ)