DMN2501UFB4-7

Name: DMN2501UFB4-7
Brand: Diodes Incorporated

模拟与电源

MOSFET N-CH 20V 1A X2-DFN1006-3

在产3-XFDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	400mOhm @ 600mA, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	82 pF @ 16 V
制造商	Diodes Incorporated
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±8V
Vgs(th) (Max) @ Id	1V @ 250µA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
最大功耗	500mW (Ta)

工作温度	-55°C ~ 150°C (TJ)